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Proceedings Paper

True wafer temperature during metallization in physical vapor deposition cluster tools
Author(s): Michael E. Adel; Shmuel Mangan; Howard Grunes; Vijay Parkhe
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Paper Abstract

Aluminum metallization is an important process for planarization and interconnect applications. Wafer temperature during deposition is one of the key parameter determining film properties such as reflectivity and resistivity. Results of experiments carried out in order to characterize the thermal behavior of product wafers during physical vapor deposition, primarily aluminum and wafer degas will be presented. The effects of back and front side depositions, backside gas pressure and plasma power level on deposition temperature are all investigated. The utility of real time in-situ temperature monitoring on every product wafer in all deposition chambers within a cluster tool and the advantages provided in terms of process monitoring are discussed.

Paper Details

Date Published: 16 September 1994
PDF: 10 pages
Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); doi: 10.1117/12.186796
Show Author Affiliations
Michael E. Adel, CI Systems Ltd. (Israel)
Shmuel Mangan, CI Systems Ltd. (Israel)
Howard Grunes, Applied Materials, Inc. (United States)
Vijay Parkhe, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 2336:
Manufacturing Process Control for Microelectronic Devices and Circuits
Anant G. Sabnis, Editor(s)

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