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Proceedings Paper

Characterization of deep-level defects and their connection with the performance of InxGa1-xAs/InP p-i-n photodiodes
Author(s): Tatiana V. Torchinskaya; Volodya I. Kooshnirenko; Ludmila V. Shchedrina; Carla J. Miner
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Paper Abstract

The parameters of the deep centers in MOCVD In0.53Ga0.47As layers and their dependence on electric field value and device topology on the wafers were studied by DLTS method in In0.53Ga0.47As/InP p-i-n photodiodes. The two deep centers with the activation energy EC -0.299 and 0.389 eV were discovered in depletion region of the p-i-n diodes. The latter defects are nonradiative recombination centers with strong electric field dependence of their activation energies and strong temperature dependence of the capture cross sections.

Paper Details

Date Published: 16 September 1994
PDF: 4 pages
Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); doi: 10.1117/12.186795
Show Author Affiliations
Tatiana V. Torchinskaya, Institute of Semiconductor Physics (Ukraine)
Volodya I. Kooshnirenko, Institute of Semiconductor Physics (Ukraine)
Ludmila V. Shchedrina, Institute of Semiconductor Physics (Ukraine)
Carla J. Miner, Bell-Northern Research Ltd. (Canada)

Published in SPIE Proceedings Vol. 2336:
Manufacturing Process Control for Microelectronic Devices and Circuits
Anant G. Sabnis, Editor(s)

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