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Proceedings Paper

Methods for parametric yield control for future 0.1-um deep submicron MOSFET manufacturing
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Paper Abstract

A study to investigate systematic ways of controlling parametric yield for future production of deep submicron MOSFETs has been performed. It is important to know how and where in the manufacturing process the parametric yield can be controlled most efficiently, because for these devices no manufacturing expertise has yet been accumulated. Our study is based on a comparative sensitivity analysis, which has revealed that yield control techniques employed in micron size devices may not be efficient in deep submicron size devices, making a reorientation for manufacturing control mandatory.

Paper Details

Date Published: 16 September 1994
PDF: 6 pages
Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); doi: 10.1117/12.186790
Show Author Affiliations
Renate Sitte, Griffith Univ. (Australia)
Sima Dimitrijev, Griffith Univ. (Australia)
H. Barry Harrison, Griffith Univ. (Australia)


Published in SPIE Proceedings Vol. 2336:
Manufacturing Process Control for Microelectronic Devices and Circuits
Anant G. Sabnis, Editor(s)

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