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Proceedings Paper

Process control using new approaches in plasma diagnostics
Author(s): Steve Reeves; Clayton Fullwood; Terry R. Turner
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Paper Abstract

As semiconductor processing requirements evolve to meet the demands of decreasing geometries, new approached in plasma metrology will be needed to monitor the performances of the equipment and its processes. This performance has traditionally been monitored via Statistical Process Control (SPC) on output parameters such as etch rate and uniformity. These measurements are typically taken on single film wafers which may not be an accurate representation of product. With emerging, nonintrusive, RF sensor technology, equipment and process engineers have access to signals which provide better resolution in determining the health of the equipment. This paper will discuss the relationships between machine settings, real-time RF sensor measurements and the etch rate and uniformity metrics typically used in machine/process qualifications. Run to run control algorithms using the RF sensor measurements will also be presented. Finally, the implications of using RF sensor measurements to provide real-time closed loop control of machine settings will be discussed.

Paper Details

Date Published: 16 September 1994
PDF: 11 pages
Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); doi: 10.1117/12.186779
Show Author Affiliations
Steve Reeves, Advanced Micro Devices, Inc. (United States)
Clayton Fullwood, Advanced Micro Devices, Inc. (United States)
Terry R. Turner, Fourth State Technology Inc. (United States)

Published in SPIE Proceedings Vol. 2336:
Manufacturing Process Control for Microelectronic Devices and Circuits
Anant G. Sabnis, Editor(s)

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