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Proceedings Paper

Pulse-modulated infrared-laser interferometric thermometry for Si substrate temperature measurement
Author(s): Jun Kikuchi; Ryo Kurosaki; Shuzo Fujimura; Hiroshi Yano
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Paper Abstract

We present a simple optical interferometric technique for measuring temperatures of semiconductor substrates. This technique determines the direction of temperature change from two interferograms, one is an original interferogram and the other is a slightly phase-shifted interferogram due to a small decrease in a wavelength of a pulse- modulated infrared semiconductor laser immediately after the laser was turned on. We measured temperature of a Si wafer during an arbitrary change of heating and cooling.

Paper Details

Date Published: 16 September 1994
PDF: 9 pages
Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); doi: 10.1117/12.186778
Show Author Affiliations
Jun Kikuchi, Fujitsu Manufacturing Technology Div. (Japan)
Ryo Kurosaki, Fujitsu Manufacturing Technology Div. (Japan)
Shuzo Fujimura, Fujitsu Process Development Div. (Japan)
Hiroshi Yano, Fujitsu Manufacturing Technology Div. (Japan)


Published in SPIE Proceedings Vol. 2336:
Manufacturing Process Control for Microelectronic Devices and Circuits
Anant G. Sabnis, Editor(s)

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