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Proceedings Paper

Emission local testing of mechanical stresses in surface layer of silicon
Author(s): A. Balodis; Yuri Dekhtyar; G. Sagalovich
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Paper Abstract

Mechanical stresses change energy gap in semiconductors. Thus, a photoelectric work function is dependent on this effect. In such a view surface layers elastic deformations are recorded by measuring of photoelectron emission quantum yield.

Paper Details

Date Published: 14 September 1994
PDF: 6 pages
Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186754
Show Author Affiliations
A. Balodis, Riga Technical Univ. (Latvia)
Yuri Dekhtyar, Riga Technical Univ. (Latvia)
G. Sagalovich, Riga Technical Univ. (Latvia)


Published in SPIE Proceedings Vol. 2334:
Microelectronics Manufacturability, Yield, and Reliability
Barbara Vasquez; Hisao Kawasaki, Editor(s)

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