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Proceedings Paper

Characterization and modeling of base current in n-p-n polysilicon emitter bipolar transistors using low-frequency noise analysis
Author(s): David Quon; Yang Hua Chang; Gregory J. Sonek; Guann-pyng Li
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Paper Abstract

Low frequency noise measurements of n-p-n polyemitter bipolar transistors showing an increasing base current 1/f noise amplitude spanning seven orders of magnitude and increasing exponential dependence on biasing current between Ib and Ib2 with increasing emitter interfacial oxide continuity and decreasing emitter junction depth are described. Coupled with corresponding variations in linearized and large signal device characteristics, these trends lead to base voltage noise intensities that can both increase and decrease with increasing biasing current within the moderate 0.6 V < Vbe < 0.8 V biasing range. This behavior has not been previously attributed to the combination of fundamental base current noise and its noise voltage transfer function explicitly, but has importance to the assessment and accurate modeling of polyemitter transistor noise performance in shallow emitter transistors. The large range and high resolution of these features also imply that low frequency noise may be useful in characterizing the structure of the broken emitter interfacial oxide layer and its electrical properties.

Paper Details

Date Published: 14 September 1994
PDF: 8 pages
Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186749
Show Author Affiliations
David Quon, Univ. of California/Irvine (United States)
Yang Hua Chang, National Yunlin Institute of Technology (Taiwan)
Gregory J. Sonek, Univ. of California/Irvine (United States)
Guann-pyng Li, Univ. of California/Irvine (United States)


Published in SPIE Proceedings Vol. 2334:
Microelectronics Manufacturability, Yield, and Reliability
Barbara Vasquez; Hisao Kawasaki, Editor(s)

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