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Proceedings Paper

Effects of P+-implanted poly-Si gate with and without TiSi2 on the injection degradation of thin film oxides
Author(s): Victor M. Ivkin; Valentin V. Baranov
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Paper Abstract

Constant current Fowler-Nordheim electron injection experiments were performed on Si/SiO2/poly-Si structures with and without a TiSi2 superlayer. It has been shown that phosphorus atoms implanted into the 3500 A thick poly-Si to a dose (3-9)*1015 cm2 followed by the 850 degree(s)C - 950 degree(s)C post implantation anneal lead to the deterioration of electrophysical characteristics of the MOS-capacitors on the one hand and on the other hand result in an improvement of the endurance against hot electron injection. Sintering of 200 A Ti at various (700 degree(s)C - 850 degree(s)C) temperatures to form TiSi2 leads to the decrease (about three times) in the sheet resistance of polycide gate and does not effect the metal-semiconductor work function. To explain these phenomena we consider two mechanisms of electronic defects appearing and disappearing. The first mechanism is connected with the Si-P bonds creation that have a larger binding energy than the Si-Si, Si-H, Si-OH bonds. The other one takes into account H-ions generation at the poly-Si/SiO2 interface and either the Si defects possivation or the Si-Si and Si-O bonds cleavage by them.

Paper Details

Date Published: 14 September 1994
PDF: 7 pages
Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186747
Show Author Affiliations
Victor M. Ivkin, Byelorussian State Univ. of Informatics and Radioelectronics (Belarus)
Valentin V. Baranov, Byelorussian State Univ. of Informatics and Radioelectronics (Belarus)


Published in SPIE Proceedings Vol. 2334:
Microelectronics Manufacturability, Yield, and Reliability
Barbara Vasquez; Hisao Kawasaki, Editor(s)

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