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Proceedings Paper

Influence of quartz glass on silicon wafers during thermal processing
Author(s): Dietmar Hellmann; Thomas Falter; Rudolf Berger; Edmund Burte
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Paper Abstract

The impact of two different quartzglass materials, electric fused (E-material) and flame fused (F-material) on silicon and silicon devices has been investigated, by performing a test process consisting of oxidation, well drive-in and gate oxide. Thereby silicon wafers had direct contact (boat-simulation) and proximity contact (tube-simulation) with the quartz. Metal contamination induced defects have been evaluated using photocurrent imaging (Elymat) for bulk recombination centers and near-surface precipitates together with E-ramp breakdown on gate oxides. The results of both tests indicate a significantly lower impact of flame fused quartzglass material on bulk as well as on surface of silicon and properties of silicon and silicon test devices.

Paper Details

Date Published: 14 September 1994
PDF: 10 pages
Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186746
Show Author Affiliations
Dietmar Hellmann, Heraeus Quarzglas GmbH (Germany)
Thomas Falter, Univ. Erlangen-Nuernberg (Germany)
Rudolf Berger, Univ. Erlangen-Nuernberg (Germany)
Edmund Burte, Fraunhofer-Institut fuer Integrierte Schaltungen (Germany)


Published in SPIE Proceedings Vol. 2334:
Microelectronics Manufacturability, Yield, and Reliability
Barbara Vasquez; Hisao Kawasaki, Editor(s)

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