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Proceedings Paper

Yield enhancement by modification of wet oxide strip processes
Author(s): Israel Rotstein; Eitan N. Shauly
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Paper Abstract

The purpose of this work was to reduce isolation oxide defect density and improve gate oxide integrity by modification of wet oxide strip and pre-diffusion clean. Work was done on 1.0 micrometers and 0.8 micrometers M2CMOS twin-well technology. Twin-wells are defined by local oxidation process using nitride layer. Active area is also defined by local oxidation. MOS gate is built of POCl3 doped polysilicon on top of 185A oxide.

Paper Details

Date Published: 14 September 1994
PDF: 7 pages
Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186745
Show Author Affiliations
Israel Rotstein, Tower Semiconductor (Israel)
Eitan N. Shauly, Tower Semiconductor (Israel)


Published in SPIE Proceedings Vol. 2334:
Microelectronics Manufacturability, Yield, and Reliability
Barbara Vasquez; Hisao Kawasaki, Editor(s)

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