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Proceedings Paper

Exoelectron emission testing of technology inserting point defects into semiconductors
Author(s): Yuri Dekhtyar
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Paper Abstract

Exoelectr on anal yzes C EAD of poi nt defects both i n crystalline and amorphous semiconductors is considered. The below concentrati on threshol ds of poi nt defects and Ion—implanted impurities that may be estimated by this method are 17 -3 13 1 -310 .. . 10 cm and 10 . . . 10 cm , correspondingly. Keywords: point defects, testing, semiconductors, exoelectron anal yzes.

Paper Details

Date Published: 14 September 1994
PDF: 7 pages
Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186740
Show Author Affiliations
Yuri Dekhtyar, Riga Technical Univ. (Latvia)

Published in SPIE Proceedings Vol. 2334:
Microelectronics Manufacturability, Yield, and Reliability
Barbara Vasquez; Hisao Kawasaki, Editor(s)

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