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Proceedings Paper

Ellipsometric measurements on SiO2 by intensity ratio technique
Author(s): Yu-Faye Chao; C. S. Wei; Wei-Te Lee; Shy Chaung Lin; Tien Sheng Chao
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Paper Abstract

A PSA photometric ellipsometric technique is used to measure the ellipsometric parameters, (psi) and (Delta) . Taking intensity ratios of A equals I((pi) /4+dp,dA)/I((pi) 4+dp/,(pi) 2+dA) and B equals I(-(pi) /4+dp,dA)/I(-(pi) /4+dp,(pi) /2+dA) to their first order approximation under small azimuth deviations of polarizer (dp) and analyzer (dA), we find that at fixed dA these two ratios have opposite gradient with respect to dp and intersect to each other at a special dp where Aequals B EQ tan2(psi) , and the position of this dp is linearly related to cos (Delta) . For comparison, (psi) and (Delta) of a SiO2/Si thin film are measured by conventional null ellipsometry and intensity ratio technique. An higher percentage error on (Delta) is expected for this PSA system. The source of errors will be discussed.

Paper Details

Date Published: 14 September 1994
PDF: 10 pages
Proc. SPIE 2265, Polarization Analysis and Measurement II, (14 September 1994); doi: 10.1117/12.186666
Show Author Affiliations
Yu-Faye Chao, National Chiao Tung Univ. (Taiwan)
C. S. Wei, National Chiao Tung Univ. (Taiwan)
Wei-Te Lee, National Chiao Tung Univ. (Taiwan)
Shy Chaung Lin, National Chiao Tung Univ. (Taiwan)
Tien Sheng Chao, National Nano Device Lab. (Taiwan)

Published in SPIE Proceedings Vol. 2265:
Polarization Analysis and Measurement II
Dennis H. Goldstein; David B. Chenault, Editor(s)

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