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Proceedings Paper

Ex-situ and in-situ probing of Column IV interfaces using optical second harmonic generation
Author(s): Jerry I. Dadap; N. M. Russell; X. F. Hu; John G. Ekerdt; Michael C. Downer; Bruce Doris; John K. Lowell; Alain C. Diebold
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Paper Abstract

Using femtosecond pulses from a Kerr-lens Mode-Locked Ti:Sapphire laser to generate second harmonic from a series of native-oxidized Si(001)/SiO2 samples prepared with systematically varied etch- induced interfacial microroughness, we demonstrate rapid, noncontact, noninvasive measurement of Angstrom-level Si(001)/SiO2 interface roughness. These measurements were performed in air and correlated with atomic force microscopy (AFM) measurements. We also demonstrate in-situ second harmonic monitoring of Si epitaxy in two growth regimes: high temperature (approximately equals 925 K) ultra high-vacuum chemical vapor deposition (UHV-CVD) growth mode and a cyclic atomic layer epitaxy (ALE) growth mode. During UHV-CVD growth of Si on ALE-grown Si0.9Ge0.1(001), we observed interference of the second harmonic signals between the growing Si surface and the buried Si0.9Ge0.1(001) interface. In the ALE growth mode, we monitored several key stages during a full cycle of growth of a partial (approximately equals 0.42) Si monolayer on Si(001) from a disilane (Si2H6) precursor.

Paper Details

Date Published: 14 September 1994
PDF: 10 pages
Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); doi: 10.1117/12.186652
Show Author Affiliations
Jerry I. Dadap, Univ. of Texas/Austin (United States)
N. M. Russell, Univ. of Texas/Austin (United States)
X. F. Hu, Univ. of Texas/Austin (United States)
John G. Ekerdt, Univ. of Texas/Austin (United States)
Michael C. Downer, Univ. of Texas/Austin (United States)
Bruce Doris, Motorola (United States)
John K. Lowell, Advanced Micro Devices, Inc. (United States)
Alain C. Diebold, SEMATECH (United States)


Published in SPIE Proceedings Vol. 2337:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing
Jagdish P. Mathur; John K. Lowell; Ray T. Chen, Editor(s)

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