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Proceedings Paper

Lifetime effects of iron and iron complexes in silicon
Author(s): Kamal K. Mishra; M. Banan; Jerry Moody; S. Chandrasekhar
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Paper Abstract

Iron doped p- and n-type samples were prepared using Czochralski method. The effect of pairing of iron with acceptors B and Al on the minority carrier lifetime was studied using the Surface Photovoltage (SPV) and DLTS methods. The effect of resistivity on the minority carrier lifetime in iron doped samples was investigated over 1 to 60 ohmcm resistivity range. The minority carrier lifetime dominated by Fei was found to be independent of resistivity. On the other hand, the lifetime controlled by FeB pairs increased by a factor of approximately town on increasing the resistivity from 1 ohmcm to 60 ohmcm. The data were analyzed using the Shockley-Reed-Hall model (SRH). The results indicate that the acceptor level of FeB pair at Ec(subscript 0.29 eV is the main recombination level of iron in p-Si. The partitioning of iron between FeB and FeAl pairs in silicon samples codoped with B and Al was found to depend upon the relative concentrations of the two acceptors. Although minority carrier lifetime values dominated by Fe(subscript i in B and Al doped samples were similar, FeAl pair was found to be approximately five times more effective as a lifetime-killer than FeB. FeAl pairs can be dissociated optically.

Paper Details

Date Published: 14 September 1994
PDF: 11 pages
Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); doi: 10.1117/12.186640
Show Author Affiliations
Kamal K. Mishra, MEMC Electronic Materials, Inc. (United States)
M. Banan, MEMC Electronic Materials, Inc. (United States)
Jerry Moody, MEMC Electronic Materials, Inc. (United States)
S. Chandrasekhar, MEMC Electronic Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 2337:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing
Jagdish P. Mathur; John K. Lowell; Ray T. Chen, Editor(s)

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