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Proceedings Paper

Limitations of submicron holographic lithography
Author(s): Ray T. Chen
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Paper Abstract

Hologram recording geometry using total internal reflection (TIR) from a photo sensitive material surface was used to achieve 0.5 micron resolution at (lambda) equals 457 nm with a readout of reconstructed image on photoresist. Such a geometry has demonstrated stability to parallel displacement within the illuminated area, and a rotation of +/- 2 degrees. The TIR recording system provided double fringe sets for each plane component inside the volume hologram. Therefore, diffraction efficiency as high as 80% was observed. The result is applicable to high volume submicron lithography and can be expanded for an eight-inch semiconductor submicron pattern. The use of a large aperture, well collimated laser beam provides us with much higher throughput than existing lightography machines have.

Paper Details

Date Published: 14 September 1994
PDF: 5 pages
Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); doi: 10.1117/12.186639
Show Author Affiliations
Ray T. Chen, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 2337:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing
Jagdish P. Mathur; John K. Lowell; Ray T. Chen, Editor(s)

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