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Proceedings Paper

Monitoring metallic contamination in the ultra large scale integration (ULSI) era
Author(s): Norm Armour
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Paper Abstract

We report on the application of optical methodologies to detect problems related to the deposition of nonparticulate contaminants on and in wafers that occurs during silicon semiconductor wafer processing. At issue is the problem of heavy metal contaminants such as Fe being deposited into the bulk of the wafer. The application of optical methodologies to detect these problems will be examined. We will also show how these techniques can be used for post-processing assessment of contaminant build-up and instrument qualification or monitoring, and how they will be used for future ULSI.

Paper Details

Date Published: 14 September 1994
PDF: 11 pages
Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); doi: 10.1117/12.186631
Show Author Affiliations
Norm Armour, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 2337:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing
Jagdish P. Mathur; John K. Lowell; Ray T. Chen, Editor(s)

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