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Proceedings Paper

Chemical Vapor deposition (CVD) TiN: a barrier metallization for submicron via and contact applications
Author(s): Karl A. Littau; Rod Mosely; M. Eizenberg; Hung V. Tran; Ashok K. Sinha; Girish A. Dixit; Manoj K. Jain; Michael F. Chisholm; Robert H. Havemann
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Paper Abstract

A new technique for low temperature CVD TiN is introduced as a barrier/glue layer for sub 0.5 micron applications. Excellent conformity (> 70%) is achieved while maintaining good electrical performance and reliability. The films are shown to be polycrystalline TiN with no preferred grain orientation. In addition compositional analysis shows significant amounts of carbon in the film presumably between the grains. The electrical properties of the CVD film were evaluated at the via and contact level. The contact and via resistances of tungsten plugs using CVD TiN glue layers are shown to be comparable to plugs using sputtered TiN. The barrier performance of the film was also evaluated at the contact level. The superior junction leakage data indicate that the CVD TiN film should have wide application as a barrier metal for sub 0.5 mm applications.

Paper Details

Date Published: 9 September 1994
PDF: 14 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186070
Show Author Affiliations
Karl A. Littau, Applied Materials, Inc. (United States)
Rod Mosely, Applied Materials, Inc. (United States)
M. Eizenberg, Applied Materials, Inc. (United States)
Hung V. Tran, Applied Materials, Inc. (United States)
Ashok K. Sinha, Applied Materials, Inc. (United States)
Girish A. Dixit, Texas Instruments Inc. (United States)
Manoj K. Jain, Texas Instruments Inc. (United States)
Michael F. Chisholm, Texas Instruments Inc. (United States)
Robert H. Havemann, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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