Share Email Print

Proceedings Paper

Characterization of a high-quality and UV-transparent PECVD silicon nitride film for nonvolatile memory applications
Author(s): Chin Kun Wang; T. L. Ying; C. S. Wei; L. M. Liu; Huang-Chung Cheng; M. S. Lin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A high quality and UV-transparent plasma enhanced chemical vapor deposition (PECVD) silicon nitride film is well developed to form a passivation layer for non-volatile memory devices. The dependence of the film properties on process parameters has been studied by factorial designed experiments. The deposition rate, uniformity, stress, refractive index, wet etching rate, density, step coverage, and UV-transmittance are the items used to evaluate the film properties. Rutherfold backside scattering (RBS) and hydrogen forward scattering (HFS) are used to measure the film composition and total hydrogen composition, respectively. Compared to the traditional PECVD nitride (PE-SiN) film known to have tensile stress and opacity to ultra-violet light (UV light), the developed PE-SiN film with very low compressive stress (< 1E9 dynes/cm*2) and excellent UV-transmittance (> 70% for 1.6 micrometers - thick film) can be achieved. The developed film has higher density, lower hydrogen content, and high N/Si inside film. Based on RBS/HFS, UV-transmittance and Fourier transform infrared spectrum (FTIR) results, the material and optical properties of the developed PE-SiN film are well investigated. This developed PE-SiN film is successfully applied to EPROM devices, and very good electrical and reliability performances have been demonstrated.

Paper Details

Date Published: 9 September 1994
PDF: 9 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186067
Show Author Affiliations
Chin Kun Wang, National Chiao Tung Univ. (Taiwan)
T. L. Ying, Taiwan Semiconductor Manufacturing Co. (Taiwan)
C. S. Wei, Taiwan Semiconductor Manufacturing Co. (Taiwan)
L. M. Liu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Huang-Chung Cheng, National Chiao Tung Univ. (Taiwan)
M. S. Lin, Taiwan Semiconductor Manufacturing Co. (Taiwan)

Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

© SPIE. Terms of Use
Back to Top