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Proceedings Paper

High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing
Author(s): Ze-Qiang Yao; H. Barry Harrison; Sima Dimitrijev; Y. T. Yeow
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Paper Abstract

Ultrathin (< 5 nm) dielectric films have been grown on (100) silicon using rapid thermal processing (RTP) in a nitric oxide (NO) ambient. The chemical composition was studied using x-ray photoelectron spectroscopy (XPS). Interface state density, charge trapping properties, and interface state generation during Fowler-Nordheim electron injection have also been investigated. The films grown in NO have excellent electrical properties. These properties are explained in terms of much stronger and large numbers of Si-N bonds in both the bulk of the dielectric films an in Si-SiO2 interface region.

Paper Details

Date Published: 9 September 1994
PDF: 6 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186065
Show Author Affiliations
Ze-Qiang Yao, Griffith Univ. (Australia)
H. Barry Harrison, Griffith Univ. (Australia)
Sima Dimitrijev, Griffith Univ. (Australia)
Y. T. Yeow, Univ. of Queensland (Australia)


Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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