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Proceedings Paper

As-deposited properties and rapid thermal annealing effects on Ti/TiN barrier layer for aluminum plug technology
Author(s): De-Dui Liao; Yih-Shung Lin; Hong Yang; Howard Witham; Javier Saenz; Jeff S. May; Jen-Jiang J. Lee
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Paper Abstract

This paper reports on the dramatically enhanced effect rapid thermal anneal (RTA) treatment has on the aluminum (Al) diffusion barrier integrity of reactively sputtered low density titanium nitride (TiN). This low density as sputtered TiN is shown to be superior to high density as sputtered TiN after both films have undergone an identical RTA treatment. The superior integrity of the low density TiN is attributed to enhanced oxygen gettering during RTA treatment at the Ti/TiN interface. This oxygen gettering has been shown to create a titanium oxynitride (TiON) layer between the Ti and TiN which accounts for the greatly enhanced barrier integrity.

Paper Details

Date Published: 9 September 1994
PDF: 12 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186056
Show Author Affiliations
De-Dui Liao, SGS-Thomson Microelectronics, Inc. (United States)
Yih-Shung Lin, SGS-Thomson Microelectronics, Inc. (United States)
Hong Yang, SGS-Thomson Microelectronics, Inc. (United States)
Howard Witham, SGS-Thomson Microelectronics, Inc. (United States)
Javier Saenz, SGS-Thomson Microelectronics, Inc. (United States)
Jeff S. May, SGS-Thomson Microelectronics, Inc. (United States)
Jen-Jiang J. Lee, SGS-Thomson Microelectronics, Inc. (United States)


Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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