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Proceedings Paper

Improved aluminum plug process for submicron via filling
Author(s): Hong Yang; Yih-Shung Lin; Loc Nguyen; De-Dui Liao; J. Worley; Greg Smith; Fu-Tai Liou
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Paper Abstract

Aluminum plug process for submicron via filling can be improved by using conventional sputtering machine and multi-step deposition process. It is found that the first-step aluminum deposition greatly impacts via step coverage. The effect of this first step metal thickness is more dramatic at higher deposition temperature. Our experiments show that it is necessary to have a continuous Al film in the vias to fully cover the sidewall and bottom at the early stage of the deposition, so that the bulk material can flow in during deposition to fill the vias. The improved process has been successfully implemented in volume production of 0.6 micrometers ASIC and 0.6 micrometers SRAM technologies.

Paper Details

Date Published: 9 September 1994
PDF: 7 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186052
Show Author Affiliations
Hong Yang, SGS-Thomson Microelectronics, Inc. (United States)
Yih-Shung Lin, SGS-Thomson Microelectronics, Inc. (United States)
Loc Nguyen, SGS-Thomson Microelectronics, Inc. (United States)
De-Dui Liao, SGS-Thomson Microelectronics, Inc. (United States)
J. Worley, SGS-Thomson Microelectronics, Inc. (United States)
Greg Smith, SGS-Thomson Microelectronics, Inc. (United States)
Fu-Tai Liou, SGS-Thomson Microelectronics, Inc. (United States)


Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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