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Proceedings Paper

Comparison study between tungsten and aluminum plug for submicrometer contact via manufacturing
Author(s): Fang Hong Gn; Lianjun Liu; Michael Guo
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Paper Abstract

Contact and via step coverage has always been an issue for aluminum metallization as device geometry continues to shrink. Conventional aluminum sputtering has failed to yield a reasonably good step coverage which is a potential reliability issue. Many efforts have been put in for the past years, which includes CVD tungsten, (both selective and blanket tungsten with etchback) and planarized aluminum to fill sub-micron contacts. The tungsten module requires additional process steps when it is to be integrated into the existing flow. Aluminum plug, on the other hand, is more attractive because of reduced process complexity and wafer cost. In this paper, we describe each module and present a comparison between various aspects of the W-plug, Al-plug and conventional cold aluminum modules. We have demonstrated the manufacturing capability of both W-plug and Al-plug for submicron contact/via process. We have also proven the Al-plug process for Chartered's 0.6 micrometers contact/via technology and believe that the Al-plug process has potential for future 0.5 micrometers contact/via technology.

Paper Details

Date Published: 9 September 1994
PDF: 9 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186049
Show Author Affiliations
Fang Hong Gn, Chartered Semiconductor Manufacturing Pte Ltd. (Singapore)
Lianjun Liu, Chartered Semiconductor Manufacturing Pte Ltd. (Singapore)
Michael Guo, Chartered Semiconductor Manufacturing Pte Ltd. (Singapore)


Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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