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Proceedings Paper

Some comparisons in the application of End-Hall and Cold Cathode ion sources in the conversion of SiO to SiO2
Author(s): Ronald R. Willey
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Paper Abstract

Silicon dioxide has many desirable properties as a coating material for the visible and near IR spectrum. These include low index, high transmittance, good adhesion, and environmental durability. The deposition of the material from solid discs or granular forms using an electron beam gun tends to have a fluctuating angular distribution. This causes reproducibility problems in some critical optical coating processes. Silicon monoxide can be evaporated from a resistance source with a highly reproducible deposition pattern, but it does not have the low index and high transmittance required. We report on attempts to develop processes which convert the SiO to SiO2 during deposition by the use of ion assisted deposition. The additional oxygen must be supplied in a sufficiently energetic process to provide the material conversion during or after the SiO deposition on the surface to be coated. The deposition rate (10 angstrom per second), the uniformity, and the repeatability of the processes must also be adequate for the production of the product at an economical rate. These experiments have been done with both an End-Hall and a Cold Cathode ion source. A comparison of the results and behavior observed with each type of ion source are reported along with recommended process parameters to be used with each.

Paper Details

Date Published: 7 September 1994
PDF: 8 pages
Proc. SPIE 2262, Optical Thin Films IV: New Developments, (7 September 1994); doi: 10.1117/12.185787
Show Author Affiliations
Ronald R. Willey, Opto Mechanik, Inc. (United States)


Published in SPIE Proceedings Vol. 2262:
Optical Thin Films IV: New Developments
James D. Rancourt, Editor(s)

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