Share Email Print

Proceedings Paper

Change of optical, electrical, and structural properties of sputtered indium tin oxide films by application of a new reactive sputter atmosphere
Author(s): M. Rottmann; Karl Heinz Heckner
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Highly qualitative indium tin oxide (ITO) films were deposited by reactive dc-sputter technique on glass and quartz substrates. Both pure H2O vapor and pure O2 have been used as reactive sputtering atmosphere. The optical constants refractive index and absorption coefficient were calculated from reflection and transmission spectra in the infrared (IR) region. Using the Drude theory the electrical parameters free carrier concentration and carrier mobility of the ITO-films were contactless determined from IR reflection spectra. The dc-H2O-sputtered ITO-films show improved optical and electrical properties. For application as transparent window material they distinguish by high visual (VIS) transmittance and high IR- reflectance. Moreover these ITO-films show a high free carrier concentration of N equals 6 X 1020 cm-3 directly after deposition compared with N equals 4 X 1020 cm-3 for dc-O2-sputtered ITO-films after thermal annealing. The differences between optical and electrical properties of de-O2- and dc-H2O-sputtered ITO-films are discussed in regard to their crystal structure and surface morphology.

Paper Details

Date Published: 9 September 1994
PDF: 11 pages
Proc. SPIE 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, (9 September 1994); doi: 10.1117/12.185429
Show Author Affiliations
M. Rottmann, Humboldt Univ. Berlin (Germany)
Karl Heinz Heckner, Humboldt Univ. Berlin (Germany)

Published in SPIE Proceedings Vol. 2255:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII
Volker Wittwer; Claes G. Granqvist; Carl M. Lampert, Editor(s)

© SPIE. Terms of Use
Back to Top