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Proceedings Paper

Preparation of photosensitive CuInGe2 thin film heterostructures and investigation of its optoelectronic properties
Author(s): M. A. Abdullaev; J. K. Amirkhanova; R. M. Gadjieva; M. A. Kakagasanov; P. P. Khokhlachov
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Paper Abstract

p-CuInSe2 single crystals and films are produced. Charge carriers mobility and carriers density reaches as high as 6 - 10 cm2/V sec and 4 - 5 X 1017 cm-3, respectively, in the films. A longwave exponential edge of quantum efficiency is 1.0 - 1.15 eV, photo-e.m.f. being invariable up to 2.5 eV. Thin film solar cells based on p-CuInSe/n-CdS heterojunctions are produced on the glass and mica substrates. The best HJ gave Voc equals 0.85 V; Jsc equals 9.7 mA/cm at 300 K under illumination by 50 mW/cm, with 6 - 7% light efficiency.

Paper Details

Date Published: 9 September 1994
PDF: 5 pages
Proc. SPIE 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, (9 September 1994); doi: 10.1117/12.185422
Show Author Affiliations
M. A. Abdullaev, Institute of Physics (Russia)
J. K. Amirkhanova, Institute of Physics (Russia)
R. M. Gadjieva, Institute of Physics (Russia)
M. A. Kakagasanov, Institute of Physics (Russia)
P. P. Khokhlachov, Institute of Physics (Russia)


Published in SPIE Proceedings Vol. 2255:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII

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