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Proceedings Paper

Ionic conductivity of tantalum oxide films prepared by sol-gel process for electrochromic devices
Author(s): Nilgun Ozer; Yongxiang He; Carl M. Lampert
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Paper Abstract

Tantalum oxide films were prepared by sol-gel process using tantalum ethoxide Ta(OC2H5)5. The dependence of deposition conditions (i.e. composition of polymeric solutions and spinning rate) on ionic conductivities for tantalum oxide films were studied. The best results achieved for films fabricated by the spin coating technique from clear polymeric solutions. These films had low packing density (rho) equals 3.2 g/cm3 and good proton conductivity (about 10-6 (Omega) -1/cm-1). X-ray photoelectron spectroscopy (XPS) was used for studying the compositions of the tantalum oxide films. We report on the use of tantalum oxide films as ion conductors in devices consisting of WO3/Ta2O5/H+ ion storage polymer structure. We found tantalum oxide to have very good properties for proton device applications.

Paper Details

Date Published: 9 September 1994
PDF: 11 pages
Proc. SPIE 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, (9 September 1994); doi: 10.1117/12.185388
Show Author Affiliations
Nilgun Ozer, Lawrence Berkeley Lab. (United States)
Yongxiang He, Lawrence Berkeley Lab. (United States)
Carl M. Lampert, Lawrence Berkeley Lab. (United States)


Published in SPIE Proceedings Vol. 2255:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII

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