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Proceedings Paper

Nonlinear electron-optical processes in asymmetric structures with quantum wells
Author(s): Alexander A. Afonenko; Ivan S. Manak; Valerii K. Kononenko
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Paper Abstract

Theoretical consideration of lasing regimes of asymmetric semiconductor heterostructures has been made. The conditions for bistable power switching and periodical radiation pulsations have been determined. The efficiency of injection of current carriers into quantum wells has been investigated. Doping levels of the layers forming the asymmetric heterostructure and its band configuration to realize the request inhomogeneous excitation of the quantum wells have been defined. The asymmetric heterostructure waveguide properties have been considered and the optical confinement factor for various lasing modes has been established. Calculations have been performed for the GaAs-AlxGa1-xAs system.

Paper Details

Date Published: 25 August 1994
PDF: 9 pages
Proc. SPIE 2212, Linear and Nonlinear Integrated Optics, (25 August 1994); doi: 10.1117/12.185156
Show Author Affiliations
Alexander A. Afonenko, Byelorussian State University (Belarus)
Ivan S. Manak, Byelorussian State University (Belarus)
Valerii K. Kononenko, Byelorussian State University (Belarus)

Published in SPIE Proceedings Vol. 2212:
Linear and Nonlinear Integrated Optics
Giancarlo C. Righini; David Yevick, Editor(s)

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