Share Email Print
cover

Proceedings Paper

Chemically produced XeF(B) electronic excited state
Author(s): Robert D. Bower; Tientsai T. Yang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

XeF(B) has been observed in the reaction of SiH4 + 2 + XeF2. dependence of XeF(B) emission intensity on [XeF2], [F2], [SiH4] and [Ar] has been measured. Possible mechanisims of XeF(B) production is discussed.

Paper Details

Date Published: 1 June 1990
PDF: 5 pages
Proc. SPIE 1225, High-Power Gas Lasers, (1 June 1990); doi: 10.1117/12.18482
Show Author Affiliations
Robert D. Bower, Rockwell International Corp. (United States)
Tientsai T. Yang, Rockwell International Corp. (United States)


Published in SPIE Proceedings Vol. 1225:
High-Power Gas Lasers
Petras V. Avizonis; Charles Freed; Jin J. Kim; Frank K. Tittel, Editor(s)

© SPIE. Terms of Use
Back to Top