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Proceedings Paper

Chemically produced XeF(B) electronic excited state
Author(s): Robert D. Bower; Tientsai T. Yang
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Paper Abstract

XeF(B) has been observed in the reaction of SiH4 + 2 + XeF2. dependence of XeF(B) emission intensity on [XeF2], [F2], [SiH4] and [Ar] has been measured. Possible mechanisims of XeF(B) production is discussed.

Paper Details

Date Published: 1 June 1990
PDF: 5 pages
Proc. SPIE 1225, High-Power Gas Lasers, (1 June 1990); doi: 10.1117/12.18482
Show Author Affiliations
Robert D. Bower, Rockwell International Corp. (United States)
Tientsai T. Yang, Rockwell International Corp. (United States)


Published in SPIE Proceedings Vol. 1225:
High-Power Gas Lasers
Petras V. Avizonis; Charles Freed; Jin J. Kim; Frank K. Tittel, Editor(s)

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