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Proceedings Paper

Structural properties of Si1-xGex layers grown onto crystalline or amorphous substrates by pulsed excimer laser annealing of Ge implanted silicon
Author(s): Florence Repplinger; Eric Fogarassy; Adriana Grob; Jean-Jacques Grob; Bernard Prevot; Jean-Paul Stoquert; Salome de Unamuno
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Paper Abstract

In this paper, the preparation of SiGe films grown onto amorphous or single crystal substrates by pulsed excimer laser crystallization of heavily Ge implanted silicon is proposed as an alternative to classical MBE and CVD techniques. Processed films were characterized by ions (channeling-RBS) and optical (Raman) techniques.

Paper Details

Date Published: 7 September 1994
PDF: 7 pages
Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); doi: 10.1117/12.184774
Show Author Affiliations
Florence Repplinger, CNRS (France)
Eric Fogarassy, CNRS (France)
Adriana Grob, CNRS (France)
Jean-Jacques Grob, CNRS (France)
Bernard Prevot, CNRS (France)
Jean-Paul Stoquert, CNRS (France)
Salome de Unamuno, CNRS (France)

Published in SPIE Proceedings Vol. 2207:
Laser Materials Processing: Industrial and Microelectronics Applications
Eckhard Beyer; Maichi Cantello; Aldo V. La Rocca; Lucien Diego Laude; Flemming O. Olsen; Gerd Sepold, Editor(s)

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