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Proceedings Paper

Simulation of diffusion process in semiconductor in the presence of high-power laser beam
Author(s): Marian Kuzma; Maegorzata M. Pociask; Eugen Sheregii
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Paper Abstract

It was demonstrated by the simulation of laser beam annealing process that one can make a great local change in concentration of impurities or intrinsic defects in a Hg1-xCdxTe crystals by long (moreover only by such) pulses of laser radiation. The diffusion processes of defects in semiconductors in the presence of high power laser beam can be described using Schottky's thermodiffusion theory. The results of calculations of time- spatial distribution of the concentration of interstitial mercury for pulse lengths 8 ns, 100 ns, and 250 microsecond(s) are presented. These computer simulated results are compared with distribution of Hg concentration in specimens subjected to laser annealing under the same condition.

Paper Details

Date Published: 7 September 1994
PDF: 6 pages
Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); doi: 10.1117/12.184752
Show Author Affiliations
Marian Kuzma, Pedagogical Univ. (Poland)
Maegorzata M. Pociask, Pedagogical Univ. (Poland)
Eugen Sheregii, Pedagogical Univ. (Poland)

Published in SPIE Proceedings Vol. 2207:
Laser Materials Processing: Industrial and Microelectronics Applications
Eckhard Beyer; Maichi Cantello; Aldo V. La Rocca; Lucien Diego Laude; Flemming O. Olsen; Gerd Sepold, Editor(s)

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