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Proceedings Paper

Novel reverse-bias auto-prepulse PFN for low voltage operation of a XeCl laser
Author(s): I. V. Chaltakov; Roberto Pini; Renzo Salimbeni; Matteo Vannini
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Paper Abstract

Efficient low voltage operation of a XeCl laser has been achieved setting a reverse-bias unit on the discharge gap of a system working in the auto-prepulse (AP) mode. Efficiencies up to 1.7% with this improved device even at a charging voltage as low as 7 kV for the main storage unit and for the bias are reported. Experimental results are presented and discussed.

Paper Details

Date Published: 16 August 1994
PDF: 4 pages
Proc. SPIE 2206, High-Power Gas and Solid State Lasers, (16 August 1994); doi: 10.1117/12.184585
Show Author Affiliations
I. V. Chaltakov, Istituto di Elettronica Quantistica - CNR (Italy)
Roberto Pini, Istituto di Elettronica Quantistica - CNR (Italy)
Renzo Salimbeni, Istituto di Elettronica Quantistica - CNR (Italy)
Matteo Vannini, Istituto di Elettronica Quantistica - CNR (Italy)


Published in SPIE Proceedings Vol. 2206:
High-Power Gas and Solid State Lasers
Markus Bohrer; Tommaso Letardi; Dieter Schuoecker; Horst Weber, Editor(s)

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