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Proceedings Paper

Improved conductivity measurement of semiconductor epitaxial layers by means of the contactless microwave method
Author(s): P. Boege; H. Schaefer; Shan-jia Xu; Xinzhang Wu; S. Einfeldt; Charles R. Becker; D. Hommel; Reinhart Geick
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Paper Abstract

Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless conductivity measurements of MBE-grown II-VI semiconductor layers.

Paper Details

Date Published: 19 August 1994
PDF: 10 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183059
Show Author Affiliations
P. Boege, Univ. Wuerzburg (Germany)
H. Schaefer, Univ. Wuerzburg (Germany)
Shan-jia Xu, Univ. of Science and Technology (China)
Xinzhang Wu, Univ. of Science and Technology (China)
S. Einfeldt, Univ. Wuerzburg (Germany)
Charles R. Becker, Univ. Wuerzburg (Germany)
D. Hommel, Univ. Wuerzburg (Germany)
Reinhart Geick, Univ. Wuerzburg (Germany)

Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)

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