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Proceedings Paper

V-band monolithic pseudomorphic high-electron-mobility transistor (HEMT) MMIC phased array components
Author(s): Guey-Liu Lan; Cheng K. Pao; Chan-Shin Wu; Ming Hu; Alan N. Downey
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Paper Abstract

Recent advances in pseudomorphic HEMT (PHEMT) MMIC technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper will describe the development of V-band PHEMT MMIC components including power amplifiers and phase shifters. For the single-stage MMIC power amplifier employing a 200 micrometers PHEMT, we achieved 151.4 mW output power (757.0 mW/mm) with 26.4% power-added efficiency at 60 GHz. A three-stage MMIC amplifier utilizing the same devices demonstrated 80 mW output power, 20.5% power-added efficiency, and 17 dB associated gain at 57 GHz. And, for the phase shifter, a four-bit phase shifter with less than 8 dB insertion loss from 61 to 63 GHz has been achieved.

Paper Details

Date Published: 19 August 1994
PDF: 7 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.182991
Show Author Affiliations
Guey-Liu Lan, Hughes Aircraft Co. (United States)
Cheng K. Pao, Hughes Aircraft Co. (United States)
Chan-Shin Wu, Hughes Aircraft Co. (United States)
Ming Hu, Hughes Aircraft Co. (United States)
Alan N. Downey, NASA Lewis Research Ctr. (United States)

Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)

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