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Proceedings Paper

V-band monolithic integrated circuits for personal communication terminals
Author(s): Masaki Funabashi; K. Ohata; K. Onda; Takashi Inoue; K. Hosoya; M. Kuzuhara
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Paper Abstract

A single-stage high gain wide band amplifier and an MMIC oscillator at V-band have been successfully fabricated based on a 0.15 micrometers T-shaped gate AlGaAs/InGaAs/AlGaAs heterojunction FET (HJFET) technology. The MMIC amplifier exhibits 7.2 dB +/- 1.0 dB gain over 49 approximately equals 61 GHz band and 15.3 dBm output power at 57.9 GHz. The MMIC oscillator shows 51 GHz oscillation with 2.8 dBm output power. These MMICs are promising for realizing compact personal communication terminals.

Paper Details

Date Published: 19 August 1994
PDF: 4 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.182986
Show Author Affiliations
Masaki Funabashi, Advanced Millimeter Wave Technologies Co., Ltd. (Japan)
K. Ohata, Advanced Millimeter Wave Technologies Co., Ltd. (Japan)
K. Onda, Advanced Millimeter Wave Technologies Co., Ltd. (Japan)
Takashi Inoue, NEC Corp. (Japan)
K. Hosoya, NEC Corp. (Japan)
M. Kuzuhara, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)

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