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Proceedings Paper

Frequency upconversion of semiconductor diode lasers
Author(s): Wilfried Lenth; William J. Kozlovsky; Roger M. Macfarlane; William P. Risk
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Paper Abstract

A number of different techniques have been used for nonlinear frequency upconversion of near-infrared semiconductor diode lasers. Intracavity frequency doubling of a diode-laser-pumped 946-nm Nd:YAG laser led to the generation of 9.5 mW of blue 473-nm power. A special electronic servo technique was devised to lock the output frequency of a single-mode GaAlAs diode laser to a monolithic KNbO3 resonator. Using the approach, 41 mW of 428-nm output were obtained with an electrical-to-optical conversion efficiency of about 10 percent. Strained-layer InGaAs/GaAs diode laser operating at about 1 micron have been fabricated for noncritically phase-matched frequency doubling in KTiOPO4. A 802-nm GaAlAs diode laser was used for upconversion pumping of a YLiF4:Er(3+) laser which operates at 551 nm with a threshold power of 50 mW at 77 K.

Paper Details

Date Published: 1 May 1990
PDF: 9 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18298
Show Author Affiliations
Wilfried Lenth, IBM/Almaden Research Ctr. (United States)
William J. Kozlovsky, IBM/Almaden Research Ctr. (United States)
Roger M. Macfarlane, IBM/Almaden Research Ctr. (United States)
William P. Risk, IBM/Almaden Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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