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Proceedings Paper

Threshold current density dependence on p-doping in AlGaInP laser
Author(s): Toshitaka Aoyagi; T. Kimura; Naoto Yoshida; Tomoko Kadowaki; Takashi Murakami; Nobuaki Kaneno; Yoshito Seiwa; Kazuo Mizuguchi; Wataru Susaki
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Paper Abstract

Minimum threshold current density (Jth) less than 2.OkA/cm2 is obtained at optimum hole concentration in the Zn-doped cladding layer (NH) of 3"4x 1O'7ca3 in the AlGaInP laser diodes. At NM lower than optimum one, Jth increases gradually due to poor electron confinement in the active layer. At NH higher than optimum one, Jth also increases due to Zn diffusion from the Zn-doped cladding layer to the active layer during epitaxial growth. One of the reasons is that Zn atoms act as nonradiative recombination centers in the active layer. By optimizing NH in the index guide AlGaInP laser diodes with 6u a width stripe, threshold current of 4OmA and astigmatism smaller than 8 m are achieved.

Paper Details

Date Published: 1 May 1990
PDF: 8 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18295
Show Author Affiliations
Toshitaka Aoyagi, Mitsubishi Electric Corp. (Japan)
T. Kimura, Mitsubishi Electric Corp. (Japan)
Naoto Yoshida, Mitsubishi Electric Corp. (Japan)
Tomoko Kadowaki, Mitsubishi Electric Corp. (Japan)
Takashi Murakami, Mitsubishi Electric Corp. (Japan)
Nobuaki Kaneno, Mitsubishi Electric Corp. (Japan)
Yoshito Seiwa, Mitsubishi Electric Corp. (Japan)
Kazuo Mizuguchi, Mitsubishi Electric Corp. (Japan)
Wataru Susaki, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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