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Proceedings Paper

670-nm transverse-mode stabilized InGaAlP laser diodes
Author(s): Yutaka Uematsu; Gen-ichi Hatakoshi; Masayuki Ishikawa; Masaki Okajima
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Paper Abstract

This paper reviews the recent resulis for our transverse-mode stabilized InGaAltP visibite semiconductor lasers. From the material viewpoint, InGaA1P/InGaP heterostructure has disadvantages with respect to the laser operation compared with the GaAlAs/GaAs one. By optimizing the laser structure, we have developed practical usable InGaAlP visible semiconductor lasers of relatively low power levels (<5mw). To extena the application field, though in the development stage, we realized the 670nm high power operation at more than 20mW and the short wavelength cw operation at 638nm.

Paper Details

Date Published: 1 May 1990
PDF: 6 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18294
Show Author Affiliations
Yutaka Uematsu, Toshiba Corp. (Japan)
Gen-ichi Hatakoshi, Toshiba Corp. (Japan)
Masayuki Ishikawa, Toshiba Corp. (Japan)
Masaki Okajima, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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