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Proceedings Paper

Switching technology from dc to GHz using 2-D semiconductor laser arrays
Author(s): Arye Rosen; Paul J. Stabile; W. M. Janton; A. M. Gombar; J. Delmaster; Richard Hurwitz; Peter R. Herczfeld; A. Bahasadri
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Paper Abstract

This paper describes the use of a generic switch from dc to GHz frequencies comprising a two-dimensional semiconductor laser diode array and a Si device. A single two-sided PIN device, activated by two 1 kW laser arrays yielded a holding voltage of 1.3 kV and conducted 192 A. The 'on' time of this 1/4 MW switch was 290 ns. In addition, this paper describes the use of optically controlled devices at HF (2-30 MHz) using high voltage PIN diodes as switching devices, and a unique optically controlled attenuator/switch at 60 GHz using a Si slab inside a waveguide. PIN devices tested in an RF circuit between 2.5 and 30 MHz yielded isolation between 28 and 49 dB in the off-state and insertion losses as low as 0.1 dB when illuminated with 280 W of optical power. Measurements at 60 GHz have shown a 0.9 dB insertion loss in the on-state, and an isolation value of better than 21 dB in the off-state.

Paper Details

Date Published: 1 May 1990
PDF: 7 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18289
Show Author Affiliations
Arye Rosen, David Sarnoff Research Ctr. (United States)
Paul J. Stabile, David Sarnoff Research Ctr. (United States)
W. M. Janton, David Sarnoff Research Ctr. (United States)
A. M. Gombar, David Sarnoff Research Ctr. (United States)
J. Delmaster, General Electric Co. (United States)
Richard Hurwitz, General Electric Co. (United States)
Peter R. Herczfeld, Drexel Univ. (United States)
A. Bahasadri, Drexel Univ. (United States)

Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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