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Proceedings Paper

Mode control of broad-area semiconductor lasers using unstable resonators
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Paper Abstract

Several on-the-chip designs of diffraction-limited, broad-area semiconductor lasers are described. In all cases, the devices achieve single lateral-mode operation as unstable resonators with magnifications greater than, or approximately equal to, two. In the first class of devices, the unstable resonator is realized by creating a diverging mirror at the outcoupling facet. In the second class, a diverging quadratic index profile is created under the active region so that the divergence is distributed uniformly between the front and back facets. The modeling shows that optimum device designs exist for both types of devices. For these optimum designs, stable diffraction-limited operation is predicted for up to six times threshold.

Paper Details

Date Published: 1 May 1990
PDF: 12 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18281
Show Author Affiliations
Michael L. Tilton, Rockwell International Power Systems (United States)
Gregory C. Dente, G.C.D. Associates (United States)
Alan H. Paxton, Mission Research Corp. (United States)


Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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