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Proceedings Paper

Polarization-dependent gain and gain saturation in strained semiconductor lasers
Author(s): Ben-mou Yu; Jia-ming Liu; Joanne S. LaCourse
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Paper Abstract

Various power-versus-current characteristics of TE and TM emission from 1.3-pm InGaAsP/InP semiconductor lasers are observed. They are categorized into the single-plarization lasers, the two-polarization coexisting lasers, and the two-polarization switching lasers. A polarization-related rate-equation model with self-saturation and crosssaturation terms are proposed to simulate these measurements. Emission of only one polarization is explained by large difference of gain and loss between the two polarization modes. Coexisting or switching of both polarizations is determined by the self-saturation and cross-saturation of the gain of the two polarization. The rate equation model is justified by the strain-dependent susceptibility. Several possible sources of strain are the slight lattice-mismatch, the superficial silicon-dioxide, and the die bonding and handling.

Paper Details

Date Published: 1 May 1990
PDF: 6 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18280
Show Author Affiliations
Ben-mou Yu, Univ. of California/Los Angeles (United States)
Jia-ming Liu, Univ. of California/Los Angeles (Taiwan)
Joanne S. LaCourse, GTE Labs. Inc. (United States)

Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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