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Proceedings Paper

Fabrication and properties of field effect device based on bi-crystal grain boundary junction of YBa2Cu3O7-δ films
Author(s): Kensuke Nakajima; Kazuki Yokota; Jian Chen; Hiroaki Myoren; Tsutomu Yamashita
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Paper Abstract

The electric field effects on bi-crystal YBa2Cu3O7-(delta ) grain boundaries were studied. The field effects were examined for an inverted MIS structure sample, in which a channel was arranged across the grain boundary on the SrTiO3 bicrystal substrate served as an insulator with the thickness of 50 micrometers . The field-induced change in the normal resistance was enhanced not only by an increase in the dielectric constant of gate insulator but also by a reduction in the carrier density nearby the grain boundary. For the sample with the YBCO thickness of 1,000 angstroms, the gate voltage of 80 V corresponding to 2 X 104 V/cm induced the relative changes in the normal resistance up to around 5%. The grain boundary junctions showed hysteretic I-V properties and sub-gap structures caused by the self-excited resonance of ac Josephson effect. Significant field effects on the hysteresis and sub-gap structures were observed. These effects were attributable to the field-induced changes in dielectric properties of the grain boundary. It was apparent that the effective dielectric constant of the grain boundary was several tens and decreased with increasing gate voltages.

Paper Details

Date Published: 10 August 1994
PDF: 8 pages
Proc. SPIE 2158, Oxide Superconductor Physics and Nano-Engineering, (10 August 1994); doi: 10.1117/12.182686
Show Author Affiliations
Kensuke Nakajima, Tohoku Univ. (Japan)
Kazuki Yokota, Tohoku Univ. (Japan)
Jian Chen, Tohoku Univ. (Japan)
Hiroaki Myoren, Tohoku Univ. (Japan)
Tsutomu Yamashita, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 2158:
Oxide Superconductor Physics and Nano-Engineering
Davor Pavuna; Ivan Bozovic, Editor(s)

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