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Proceedings Paper

Fabrication of microlenses in compound semiconductors and monolithic integration with diode lasers
Author(s): Zong-Long Liau; James N. Walpole; Vicky Diadiuk; Daniel E. Mull; Leo J. Missaggia
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Paper Abstract

Large-numerical-aperture microlenses have been fabricated in compound semiconductors by chemical etching and mass transport (surface-energy minimization) and have been monolithically integrated with GaInAsP/InP surface-emitting lasers. The microlenses showed smooth surface, accurate profiles, and near diffraction-limited beam collimation. Techniques have been developed for accurate alignment between microlenses and buried-heterostructure waveguide gain regions fabricated on opposite sides of a substrate. The integrated devices showed room-temperature pulsed threshold currents of 70 mA, narrow beam divergence of 1.25 deg, and are potentially advantageous for fiber coupling, optical interconnects, laser-array applications, etc.

Paper Details

Date Published: 1 May 1990
PDF: 8 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18265
Show Author Affiliations
Zong-Long Liau, Lincoln Lab./MIT (United States)
James N. Walpole, Lincoln Lab./MIT (United States)
Vicky Diadiuk, Lincoln Lab./MIT (United States)
Daniel E. Mull, Lincoln Lab./MIT (United States)
Leo J. Missaggia, Lincoln Lab./MIT (United States)

Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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