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Proceedings Paper

Failure mechanisms in monolithic AlGaAs laser devices
Author(s): William J. Fritz; Thomas H. Faltus; Jack B. Yahl
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Paper Abstract

Failed or degraded monolithic linear laser diode arrays and integrated optoelectronic devices were analyzed to identify failure mechanisms that limit reliability and lifetime. The primary failure mechanism identified in the laser diode arrays was 110-line-oriented dark line defects behind the facet. The cause was due to operation at too long of a pulse width at high peak optical power levels. In addition, facet anomalies contributed to the failure in some cases. Failure mechanisms identified in integrated optoelectronic devices were bulk degradation due to surface damage, facet-related mechanisms, and heat sink bond degradation.

Paper Details

Date Published: 1 May 1990
PDF: 9 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18258
Show Author Affiliations
William J. Fritz, McDonnell Douglas Electronic Systems Co. (United States)
Thomas H. Faltus, McDonnell Douglas Electronic Systems Co. (United States)
Jack B. Yahl, McDonnell Douglas Electronic Systems Co. (United States)


Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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