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Proceedings Paper

High-power InGaAsP/InP superluminescent diodes
Author(s): Richard J. Fu; Eric Y. Chan; Dan J. Booher; Chi-Shain Hong
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Paper Abstract

High power superluminescent diodes (SLD) with buried crescent heterostructure have been successfully developed. The output power as high as 10 mW at 180 mA and the spectral width as wide as 30 nm are achieved. The fabrication and performance characteristics of these diodes are described. Good far field patterns are obtained in both directions. Measured I-V, L-I and emission spectrum are presented.

Paper Details

Date Published: 1 May 1990
PDF: 4 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18251
Show Author Affiliations
Richard J. Fu, Boeing Aerospace and Electronics Co. (United States)
Eric Y. Chan, Boeing Aerospace and Electronics Co. (United States)
Dan J. Booher, Boeing Aerospace and Electronics (United States)
Chi-Shain Hong, Boeing Aerospace and Electronics Co. (United States)


Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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