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Proceedings Paper

780-nm high-power laser diode fabricated by metal organic chemical vapor deposition technique
Author(s): Yoichiro Ohta; Tetsuya Yagi; Hitoshi Kagawa; Hideyo Higuchi; Kuniki Tamari; Yuzo Kashimoto
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Paper Abstract

The 780nm 35mW I2SPB lasers(Inverted Inner Stripe Laser with a p- GaAs Buffer Layer) with a thin active layer have been successflly developed by employing MOCVD. Accelerated aging tests on the ISPB lasers with the cavity length of 400iim at 60 °C, 30mW project lifetimes (MTTF) greater than l0000hrs. The narrow standard deviations of beam divergences parallel and perpendicullar to the junction plane, respectively 0.18 and O.2Odeg, are achieved. The small astigmatic distance less than 6iim and the high optical S/N ratio more than 65dB (at f=2OkHz, BW=300Hz and P=3OmW) are obtained. These exellent results indicate that the I2SPB lasers are available for the Magneto-Optical Disk (MOD) applications.

Paper Details

Date Published: 1 May 1990
PDF: 4 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18249
Show Author Affiliations
Yoichiro Ohta, Mitsubishi Electric Corp. (Japan)
Tetsuya Yagi, Mitsubishi Electric Corp. (Japan)
Hitoshi Kagawa, Mitsubishi Electric Corp. (Japan)
Hideyo Higuchi, Mitsubishi Electric Corp. (Japan)
Kuniki Tamari, Mitsubishi Electric Corp. (Japan)
Yuzo Kashimoto, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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