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Proceedings Paper

Fundamental transverse mode 100-mW semiconductor laser with high reliability
Author(s): Takao Yamaguchi; Keiichi Yodoshi; Kimihide Minakuchi; Yasuaki Inoue; Koji Komeda; Norio Tabuchi; Yasuyuki Bessho; Kazushi Mori; Tatsuhiko Niina
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Paper Abstract

A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2000 hours at 60 C.

Paper Details

Date Published: 1 May 1990
PDF: 8 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18248
Show Author Affiliations
Takao Yamaguchi, Sanyo Electric Co., Ltd. (Japan)
Keiichi Yodoshi, Sanyo Electric Co., Ltd. (Japan)
Kimihide Minakuchi, Sanyo Electric Co., Ltd. (Japan)
Yasuaki Inoue, Sanyo Electric Co., Ltd. (Japan)
Koji Komeda, Sanyo Electric Co., Ltd. (Japan)
Norio Tabuchi, Sanyo Electric Co., Ltd. (Japan)
Yasuyuki Bessho, Sanyo Electric Co., Ltd. (Japan)
Kazushi Mori, Sanyo Electric Co., Ltd. (Japan)
Tatsuhiko Niina, Sanyo Electric Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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