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Proceedings Paper

Low threshold current coplanar vertical injection laser diode for optoelectronic integrated circuits
Author(s): Shogo Takahashi; Katsuhiko Goto; H. Uesugi; Harumi Nishiguchi; Etsuji Omura; Hirofumi Namizaki
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Paper Abstract

A low threshold coplanar vertical injection laser diode (CPVI-LD) has been newly developed utilizing impurityinduced disordering of a single quantum well. The threshold current as low as 13 mA has been realized in CW operation. The behavior of Si and Zn solid phase diffusion is precisely investigated for the realization of the CPVJ-LD.

Paper Details

Date Published: 1 May 1990
PDF: 6 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18242
Show Author Affiliations
Shogo Takahashi, Mitsubishi Electric Corp. (Japan)
Katsuhiko Goto, Mitsubishi Electric Corp. (Japan)
H. Uesugi, Mitsubishi Electric Corp. (Japan)
Harumi Nishiguchi, Mitsubishi Electric Corp. (Japan)
Etsuji Omura, Mitsubishi Electric Corp. (Japan)
Hirofumi Namizaki, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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