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Proceedings Paper

Monolithically stacked quantum well lasers
Author(s): Robert G. Waters; Y. C. Chen; Richard J. Dalby
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Paper Abstract

Monolithic stacking of up to three quantum well lasers has been demonstrated. CW threshold current densities per well and differential quantum efficiencies are comparable to those for individual devices, and transverse far-field patterns indicate phase-locking. Catastrophic optical damage levels increase with increasing quantum-well count and are substantially higher than those achieved with a single quantum-well laser when GaAs wells are involved.

Paper Details

Date Published: 1 May 1990
PDF: 10 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18241
Show Author Affiliations
Robert G. Waters, McDonnell Douglas Electronic Systems Co. (United States)
Y. C. Chen, McDonnell Douglas Electronic Systems Co. (United States)
Richard J. Dalby, McDonnell Douglas Electronic Systems Co. (United States)


Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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