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Proceedings Paper

Operating characteristics of strained InGaAs/AlGaAs quantum well lasers
Author(s): David P. Bour; Ramon U. Martinelli; Gary A. Evans; Nils W. Carlson; Dean B. Gilbert; Michael Ettenberg
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Paper Abstract

High-performance strained InGaAs/AlGaAs lasers fabricated from material grown by atmospheric pressure organometallic vapor phase epitaxy are demonstrated in a variety of structures. The results suggest that the poorer performance observed in the longer wavelength, more highly strained structures is due to an increasing density of interfacial defects even in quantum wells (QWs) of subcritical thickness. Despite this, a graded QW structure improved the performance of highly strained QW lasers, presumably because it reduces lattice mismatch at the active region interfaces. Long-lived InGaAs QW lasers are demonstrated, and strained layer materials are applied to two kinds of two-dimensional laser arrays with performance comparable to GaAs QW lasers

Paper Details

Date Published: 1 May 1990
PDF: 14 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18239
Show Author Affiliations
David P. Bour, David Sarnoff Research Ctr. (United States)
Ramon U. Martinelli, David Sarnoff Research Ctr. (United States)
Gary A. Evans, David Sarnoff Research Ctr. (United States)
Nils W. Carlson, David Sarnoff Research Ctr. (United States)
Dean B. Gilbert, David Sarnoff Research Ctr. (United States)
Michael Ettenberg, David Sarnoff Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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