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Proceedings Paper

Characteristics of high-power, InGaAs/AlGaAs laser diodes
Author(s): David F. Welch; Christian F. Schaus; Shang Zhu Sun; Max Cardinal; William S. Streifer; Donald R. Scifres
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Paper Abstract

Both gain-guided and index-guided InGaAs/AlGaAs pseudomorphic laser diodes have been fabricated and tested. The characteristics are similar to lattice-matched GaAs/AlGaAs lase diodes in that the threshold current, differential efficiency, and maximum output powers are comparable. Output powers of 3 W CW have been achieved at 960 nm from a 100 micron aperture laser. An increase in the gain coefficient by 30 percent has been measured in the lasers with strained active regions. Single-mode lasers have also been fabricated which operate to 350 mW, 180 mW in a single transverse and longitudinal mode.

Paper Details

Date Published: 1 May 1990
PDF: 6 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18238
Show Author Affiliations
David F. Welch, Spectra Diode Labs., Inc. (United States)
Christian F. Schaus, Univ. of New Mexico (United States)
Shang Zhu Sun, Univ. of New Mexico (United States)
Max Cardinal, Spectra Diode Labs., Inc. (United States)
William S. Streifer, Spectra Diode Labs., Inc. (United States)
Donald R. Scifres, Spectra Diode Labs., Inc. (United States)


Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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